Applications are invited from eligible candidates for the post of (2) Research Associate to work in the project funded by Department of Electrical Engineering , IIT Bombay, on temporary basis.
Post Date: 14/07/2017
Name of post: Research Associate
Name of post: Research Associate
Project Title: AN INVESTIGATION ON THE OPTICAL, ELECTRICAL AND SPECTRAL CHARACTERISTICS OF STRAIN-COUPLED MULTILAYER (x10, x20,..) In(Ga)As/GaAs-based NANO-SCALE QUANTUM DOT HETEROSTUCTURES
Funded by: Department of Electrical Engineering , IIT Bombay
Tenure of the Project: 1 years
Funded by: Department of Electrical Engineering , IIT Bombay
Tenure of the Project: 1 years
Essential Qualifications: Ph.D/MD/MS/MDS or equivalent degree or having 3 years of research, teaching and design and developement experience after MVSc/M.Pharm/ME/M.Tech with at least one research paper in Science Citation Indexed (SCI) journal
Job Profile: The candidate should have a strong background in Molecular Beam Epitaxy of Gallium Arsenide nanostructure-based materials and devices. In addition, the candidate should be able to operate and/or knowledgeable about one or more of the instruments below such as Photoluminescence, PLE, X-Ray diffraction, Cross sectional TEM, infrared detector fabrication and characterization (spectral response, noise, I-V-T etc).
Job Profile: The candidate should have a strong background in Molecular Beam Epitaxy of Gallium Arsenide nanostructure-based materials and devices. In addition, the candidate should be able to operate and/or knowledgeable about one or more of the instruments below such as Photoluminescence, PLE, X-Ray diffraction, Cross sectional TEM, infrared detector fabrication and characterization (spectral response, noise, I-V-T etc).
Emoluments: Rs.36000/- p.m. + HRA
Last Date: 24/07/2017
